Electroconductivity of the amorphous films MnCl2-GeS2-Ga2S3 and MnS-GeS2-Ga2S3, prepared by spin-coating method
https://doi.org/10.21266/2079-4304.2022.238.243-253
Abstract
Glassy germanium and gallium chalcogenides have a wide range of practical applications. Transparency in the IR region of the spectrum, low sensitivity to impurities, and high chemical stability make these amorphous materials promising for the needs of the electronics industry. Chalcogenide films MnCl2-GeS2-Ga2S3 and MnS-GeS2-Ga2S3 were synthesized from the solutions of chalcogenide glasses in nbutylamine and also the specific electroconductivity of films has been investigated. The deposition of amorphous films was carried out according to the previously developed Baidakov–Shkolnikov method. For the measurements of specific electroconductivity values the AC and DC methods are used. The charge transfer activation energy and the pre-exponential factor were calculated using an Arrheniustype equation. The specific surface resistance was determined from the ratio of the product of the surface resistance of the sample and the contact length to the distance between the contacts. The specific surface electrical conductivity of the films was taken as the reciprocal of the specific surface resistance. With in increase in the manganese salts content in the chloride and sulphide systems an increase the absolute values of the electroconductivity are observed. It was found that germanium and gallium chalcogenides concentration rations in the glass-forming network of bonds are important for conductivity level in films. The electroconductivity of chalcogenide glasses and films of a similar composition practically do not differ. The chalcogenide glasses mechanism of dissolution in aliphatic amines is explained the similar electroconductivity parameters of glasses and films.
About the Authors
D. L. Baidakov
St.Petersburg State Forest University
Russian Federation
Russian Federation
BAIDAKOV Dmitry L. – PhD (Chemistry), Assistant professor
194021. Institute per. 5. St. Petersburg
N. V. Michailova
Federal State Budgetary Institution Scientific Research Center named after V.A. Almazova
Russian Federation
Russian Federation
MICHAILOVA Ninel V. – PhD (Chemistry), Assistant professor, Faculty of Medicine, Institute of Medical Education
197341. Kolomyazhsky av. 5. St. Petersburg
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Review
For citations:
Baidakov D.L., Michailova N.V. Electroconductivity of the amorphous films MnCl2-GeS2-Ga2S3 and MnS-GeS2-Ga2S3, prepared by spin-coating method. Izvestia Sankt-Peterburgskoj lesotehniceskoj akademii. 2022;(238):243-253. (In Russ.) https://doi.org/10.21266/2079-4304.2022.238.243-253
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