Kinetics and mechanism of linear crystal growth in As2Se3 glass
https://doi.org/10.21266/2079-4304.2021.234.267-282
Abstract
The influence of small additions of tin and lead on the kinetic parameters of isothermal bulk crystallization of glasses based on As2Se3. The kinetics of mainly surface crystallization of As2Se3 glass used in electronic engineering and fiber IR optics has been studied by differential scanning calorimetry and microscopy. The influence of the supercooling value ΔT on the mechanism and kinetic parameters of crystallization of As2Se3 glass is not sufficiently studied, The theoretical analysis of the experimental dependences of the linear growth rate of As2Se3 crystals on the temperature and viscosity of the As2Se3 glass has been performed. In the temperature range 240–345 °С (overcooling 135°–30°), a dislocation mechanism has appeared to be probable for the linear growth of spherulites and the surface crystallized layer in the bulk As2Se3 glass. For individual crystals with dislocation-free faces in As2Se3 spherulites, the lamellar (plate-like) growth mechanism with surface two dimensional nucleation (2Dsg model) appeared to be probable. The linear growth rate in glass As2Se3 at 240–345°C can be theoretically calculated, if we introduce the probability factor f (ТΔT) to the Turnball–Cohen formula of the growth on the steps of screw dislocations and assume the free activation energy for the crystal growth ΔGa'' (T) to be equal to the kinetic barrier at the viscous flow of the glass ΔGη # (T) in the Heiring equation.
About the Author
E. V. Shkol’nikovRussian Federation
SHKOL`NIKOV Evgeny V. – DSc. (Chemical), professor
194021. Institute per. 5. St. Petersburg
Researcher ID : G-8108-2016
Scopus Author ID :Scopus7003735499
References
1. Nemilov S.V., Petrovskii G.T. Issledovanie vyazkosti stekol sistemy As–Se [The viscosity study of glasses of the As-Se system. Zhurnal prikladnoi khimii, 1963, vol. 36, no. 5, pp. 977–981. (In Russ.).
2. Shkol'nikov E.V. K kinetike rosta kristallov v steklakh M2O ͬ SiO2 (M = Li,Na,,K) [The kinetics of crystal growth in glasses М2О ·2SiO2 (М = Li, Na, K)]. Fizika i himiya stekla, 1980, vol. 6, no. 2, pp. 153−163. (In Russ.).
3. Shkol'nikov E.V. O vzaimosvyazi strukturno-khimicheskikh osobennostei i kineticheskikh parametrov kristallizatsii stekla [On the relationship of structural – chemical characteristics and kinetic parameters of the glass crystallization]. Stekloobraznoe sostoyanie: trudy VII Vsesoyuznogo soveshchaniya. Leningrad: Nauka, 1983, pp. 131–135. (In Russ.).
4. Shkol`nikov E.V. Strukturno-khimicheskaya model` poluprovodnikovykh stekol AsSe1,5Snx (x ≤ 0,3) [Structural-chemical model of semiconducting glasses AsSe1,5Snx (x ≤ 0,3)]. Izvestia Sankt-Peterburgskoj Lesotehniceskoj Akademii, 2014, is. 208, pp. 162–171 (In Russ.)
5. Shkol’nikov E.V. Mechanism of surface isothermal crystallization of TlAsS2 и TlAsSе2 glasses. Izvestia Sankt-Peterburgskoj Lesotehniceskoj Akademii, 2018, is.222, pp. 228–239 (in Russian with English summary). DOI: 10.21266/2079-4304.2018.222.228-239.
6. Shkol`nikov E.V. Kinetics of sitallization of semiconducting AsSe1.5Snx (x = 0,13, 0,20) glasses. Izvestia Sankt-Peterburgskoj Lesotehniceskoj Akademii, 2019, is. 226, pp. 208–221 (in Russian with English summary). DOI: 10.21266/2079-4304.2019.226.208-221.
7. Shkol’nikov E.V. Kinetics and mechanism of isothermal crystallallization of AsSe1.5 Pbx (x = 0.025, 0.13) semiconductor glasses. Izvestia Sankt-Peterburgskoy Lesotehnicheskoy Akademii, 2020, is. 231, pp. 222–237 (in Russian with English summary). DOI: 10.21266/2079-4304.2020.231.222-237
8. Arai T., Komiya S., Kudo K. Temperature dependence of vibrational spectra in crystalline, amorphous and liquid As2Se3. Journal of Non-Crystalline Solids, 1975, Vol. 18, no. 2, pp.289- 294.
9. Budewski E., Bostanoff B., Vitanoff T., Stoinoff Z., Kotzewa A., Kaischew R., Zweidimensionale Keimbildung und Ausbreitung von Monoatomaren Schichten versetzungsfreien (100)–Flächen von Silbereinkristallen. Physica Status Solidi (B), 1966, vol. 13, no. 2, pp. 577–588.
10. Henderson D.W., Ast D.G. Viscosity and crystallization kinetics of As2Se3. Journal of Non−Crystalline Solids, 1984, vol. 64, no. 1, pp. 43−70.
11. Jackson K.A., Uhlmann D.R., Hunt J.D. On the nature of crystal growth from the melt. Journal of Crystal Growth, 1967, vol. 1, no.1, pp. 1−36.
12. Malek J., Shanelova J., Martinkova S., Pilny P.,. Kostal P. Crystal growth velocity in As2Se3 supercooled liquid. Crystal Growth and Design, 2017, vol. 17, no. 9, pp. 4990–4999.
13. Platakis N.S., Gatos R.C. Devitrification characteristics of the semiconductor system (1 –x)As2Se3·xSb2Se3. Journal of the Electrochemical Society, 1972, vol. 119, no. 7, pp. 914–920.
14. Schmelzer Ju. W.P., Abyzov A.S., Fokin V.M., Schick Ch., Zanotto E.D. Crystallization in glass-forming liquids: Effects of decoupling of diffusion and viscosity on crystal growth. Journal of Non-Crystalline Solids, 2015, vol. 429, pp. 45–53.
15. Turnbull D., Cohen M.H. Crystallization kinetics and glass formation. Modern aspects of the vitreous state. Ed. J.D. MacKenzie. London: Butterworth and Co.Publishers Ltd, 1960, pp. 38−62.
Review
For citations:
Shkol’nikov E.V. Kinetics and mechanism of linear crystal growth in As2Se3 glass. Izvestia Sankt-Peterburgskoj lesotehniceskoj akademii. 2021;(234):267-282. (In Russ.) https://doi.org/10.21266/2079-4304.2021.234.267-282